npn epitaxial ty transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current 600 ma p c collector power dissipation 350 mw t stg storage temperature 150 c symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 75 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 40 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 6 v i cbo collector cut-off current v cb =60v, i e =0 0.01 a h fe * dc current gain v ce =10v, i c =0.1ma v ce =10v, i c =1ma v ce =10v, i c =10ma v ce =10v, i c =150ma v ce =10v, i c =500ma 35 50 75 100 40 300 v ce (sat) * collector-emitter saturation voltage i c =150ma, i b =15ma i c =500ma, i b =50ma 0.3 1.0 v v v be (sat) * base-emitter saturation voltage i c =150ma, i b =15ma i c =500ma, i b =50ma 0.6 1.2 2.0 v v f t current gain bandwidth product i c =20ma, v ce =20v, f=100mhz 300 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 8 pf nf noise figure i c =100 a, v ce =10v r s =1k ? , f=1mhz 4db t on turn on time v cc =30v, i c =150ma v be =0.5v, i b1 =15ma 35 ns t off turn off time v cc =30v, i c =150ma i b1 =i b2 =15ma 285 ns 1. base 2. emitter 3. collector KST2222A general purpose transistor 1p marking sot-23 1 2 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package dimensions 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com KST2222A product specification
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